Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a semiconductor substrate, memory blocks, a first wiring, a second wiring, a first contact, a first transistor, and a second transistor. The memory blocks are spaced from the semiconductor substrate in a first direction and are arranged in a second direction. The first wiring is farther from the semiconductor substrate than the memory blocks. The second wiring is closer to the semiconductor substrate than the memory blocks. The first contact is electrically connected between the first wiring and the second wiring. The first and second transistors are disposed on the semiconductor substrate. The first transistor is electrically connected between the second wiring and a first memory block. The second transistor is electrically connected between the second wiring and a second memory block. The first contact is disposed between the first transistor and the second transistor in the second direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of Japanese Patent Application No. 2020-080978, filed on May 1, 2020, the entire contents of which are incorporated herein by reference.

BACKGROUND Field

Embodiments described herein relate generally to a semiconductor memory device.

Description of the Related Art

There has been known a semiconductor memory device that includes a semiconductor substrate, a plurality of memory blocks spaced from the semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate and arranged in a second direction intersecting with the first direction, and a plurality of transistors disposed on the semiconductor substrate and connected to the plurality of memory blocks via a plurality of wirings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic circuit diagram illustrating a configuration of a semiconductor memory device according to a first embodiment;

FIG. 2 is a schematic plan view of a memory die MD according to the embodiment;

FIG. 3 is a schematic perspective view of the memory die MD;

FIG. 4 is a schematic enlarged view of a part indicated by A in FIG. 2;

FIG. 5 is a schematic cross-sectional view of a structure illustrated in FIG. 4 taken along the line B-B′ and viewed along the arrow direction;

FIG. 6 is a schematic enlarged view of a part indicated by C in FIG. 5;

FIG. 7 is a schematic enlarged view of a part indicated by D in FIG. 2;

FIG. 8 is a schematic perspective view in which a part of a configuration is omitted from the structure illustrated in FIG. 3;

FIG. 9 is a schematic perspective view in which a part of a configuration is omitted from the structure illustrated in FIG. 3;

FIG. 10 is a schematic plan view illustrating a first exemplary configuration of the memory die MD;

FIG. 11 is a schematic plan view illustrating a second exemplary configuration of the memory die MD;

FIG. 12 is a schematic plan view illustrating a third exemplary configuration of the memory die MD;

FIG. 13 is a schematic plan view illustrating a configuration of a semiconductor memory device according to a first comparative example;

FIG. 14 is a schematic plan view illustrating a configuration of a semiconductor memory device according to a second comparative example;

FIG. 15 is a schematic graph to describe a wiring resistance;

FIG. 16 is a schematic perspective view illustrating a configuration of a semiconductor memory device according to a second embodiment;

FIG. 17 is a schematic perspective view in which a part of a configuration is omitted from the structure illustrated in FIG. 16;

FIG. 18 is a schematic perspective view illustrating a configuration of a semiconductor memory device according to a third embodiment;

FIG. 19 is a schematic perspective view in which a part of a configuration is omitted from the structure illustrated in FIG. 18;

FIG. 20 is a schematic plan view illustrating a configuration of a semiconductor memory device according to another embodiment; and

FIG. 21 is a schematic plan view illustrating a configuration of a semiconductor memory device according to another embodiment.

DETAILED DESCRIPTION

A semiconductor memory device according to one embodiment includes: a semiconductor substrate; a plurality of memory blocks spaced from the semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate, the plurality of memory blocks being arranged in a second direction intersecting with the first direction; a first wiring that is farther from the semiconductor substrate than the plurality of memory blocks in the first direction; a second wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction; a first contact electrically connected between the first wiring and the second wiring; a first transistor disposed on the semiconductor substrate, the first transistor being electrically connected between the second wiring and a first memory block among the plurality of memory blocks; and a second transistor disposed on the semiconductor substrate, the second transistor being electrically connected between the second wiring and a second memory block among the plurality of memory blocks. The first contact is disposed between the first transistor and the second transistor in the second direction.

Next, the semiconductor memory device according to embodiments are described in detail with reference to the drawings. The following embodiments are only examples, and not described for the purpose of limiting the present invention. The following drawings are schematic, and for convenience of description, a part of a configuration and the like is sometimes omitted. Parts common in a plurality of embodiments are attached by same reference numerals and their descriptions may be omitted.

In this specification, when referring to “semiconductor memory device,” it may mean a memory die and may mean a memory system including a control die, such as a memory chip, a memory card, and a Solid State Drive (SSD). Further, it may mean a configuration including a host computer, such as a smartphone, a tablet terminal, and a personal computer.

In this specification, when referring to that a first configuration “is electrically connected” to a second configuration, the first configuration may be directly connected to the second configuration, and the first configuration may be connected to the second configuration via a wiring, a semiconductor member, a transistor, or the like. For example, when three transistors are connected in series, even when the second transistor is in OFF state, the first transistor is “electrically connected” to the third transistor.

In this specification, when referring to that the first configuration “is connected between” the second configuration and a third configuration, it may mean that the first configuration, the second configuration, and the third configuration are connected in series and the second configuration is connected to the third configuration via the first configuration.

In this specification, when referring to that a circuit or the like “electrically conducts” two wirings or the like, it may mean, for example, that this circuit or the like includes a transistor or the like, this transistor or the like is disposed on a current path between the two wirings, and this transistor or the like turns ON.

In this specification, a direction parallel to an upper surface of a substrate is referred to as an X-direction, a direction parallel to the upper surface of the substrate and perpendicular to the X-direction is referred to as a Y-direction, and a direction perpendicular to the upper surface of the substrate is referred to as a Z-direction.

In this specification, a direction along a predetermined plane may be referred to as a first direction, a direction along this predetermined plane and intersecting with the first direction may be referred to as a second direction, and a direction intersecting with this predetermined plane may be referred to as a third direction. These first direction, second direction, and third direction may correspond to any of the X-direction, the Y-direction, and the Z-direction and need not to correspond to these directions.

Expressions, such as “above” and “below,” in this specification are based on the substrate. For example, a direction away from the substrate along the Z-direction is referred to as above and a direction approaching the substrate along the Z-direction is referred to as below. A lower surface and a lower end of a certain configuration mean a surface and an end portion at the substrate side of this configuration. An upper surface and an upper end of a certain configuration mean a surface and an end portion at a side opposite to the substrate of this configuration. A surface intersecting with the X-direction or the Y-direction is referred to as a side surface and the like.

In this specification, a part of a surface of a member connected to another member may be referred to as a “connecting surface”.

FIRST EMBODIMENT

FIG. 1 is a schematic circuit diagram illustrating a part of a configuration of a semiconductor memory device according to the first embodiment.

As illustrated in FIG. 1, a memory die MD includes a memory cell array MCA that stores data and a peripheral circuit PC connected to the memory cell array MCA.

The memory cell array MCA includes a plurality of memory blocks BLK. The plurality of memory blocks BLK each include a plurality of string units SU. The plurality of string units SU each include a plurality of memory strings MS. The plurality of memory strings MS have one ends each connected to the peripheral circuit PC via a bit line BL. The plurality of memory strings MS have the other ends each connected to the peripheral circuit PC via a common source line SL.

The memory string MS includes a drain-side select transistor STD, a plurality of memory cells MC (memory transistors), a source-side select transistor STS, and a source-side select transistor STSb, which are connected in series between the bit line BL and the source line SL. Hereinafter, the drain-side select transistor STD, the source-side select transistor STS, and the source-side select transistor STSb may be simply referred to as select transistors (STD, STS, STSb).

The memory cell MC is a field-effect type transistor including a semiconductor layer that functions as a channel region, a gate insulating film including an electric charge accumulating film, and a gate electrode. The memory cell MC has a threshold voltage that changes according to an electric charge amount in the electric charge accumulating film. The memory cell MC stores one bit or a plurality of bits of data. Word lines WL are connected to respective gate electrodes of the plurality of memory cells MC corresponding to one memory string MS. These word lines WL are each connected to all of the memory strings MS in one memory block BLK in common.

The select transistor (STD, STS, STSb) is a field-effect type transistor including a semiconductor layer that functions as a channel region, a gate insulating film, and a gate electrode. Select gate lines (SGD, SGS, SGSb) are connected to the respective gate electrodes of the select transistors (STD, STS, STSb). The drain-side select gate line SGD is disposed corresponding to the string unit SU and connected to all of the memory strings MS in one string unit SU in common. The source-side select gate line SGS is connected to all of the memory strings MS in a plurality of string units SU in common. The source-side select gate line SGSb is connected to all of the memory strings MS in the plurality of string units SU in common.

The peripheral circuit PC includes a voltage generate circuit VG, an address decoder 22, a block select circuit 23 and a voltage select circuit 24 that transfer an operating voltage to the memory cell array MCA in response to an output signal from the address decoder 22, a sense amplifier module SAM, and a sequencer SQC.

The voltage generate circuit VG is connected to a plurality of voltage supply lines 31. The voltage generate circuit VG includes, for example, a step down circuit, such as a regulator, and a step up circuit, such as a charge pump circuit 32. A power supply voltage and a ground voltage are supplied to each of these step down circuit and step up circuit. For example, the voltage generate circuit VG generates a plurality of patterns of operating voltages applied to the bit line BL, the source line SL, the word line WL, and the select gate line (SGD, SGS, SGSb) in a read operation, a write operation, and an erase operation on the memory cell array MCA, in accordance with a control signal from the sequencer SQC to simultaneously output the operating voltages to the plurality of voltage supply lines 31. The operating voltage output from the voltage supply line 31 is appropriately adjusted in accordance with the control signal from the sequencer SQC.

The address decoder 22 includes a plurality of block select lines BLKSEL and a plurality of voltage select lines 33. For example, the address decoder 22 sequentially refers to a row address in the address register in response to the control signal from the sequencer SQC, decodes this row address to cause predetermined block select transistor 35 and voltage select transistors 37 corresponding to the row address to be in a state of ON, and cause the block select transistors 35 and the voltage select transistors 37 other than the above to be in a state of OFF. For example, voltages of the predetermined block select line BLKSEL and voltage select line 33 are set to be in a state of “H” and voltages other than those are set to be in a state of “L.” When a P channel type transistor is used, not an N channel type transistor, an inverse voltage is applied to these wirings.

In the illustrated example, in the address decoder 22, one block select line BLKSEL is disposed per memory block BLK. However, this configuration is appropriately changeable. For example, one block select line BLKSEL may be included in per two or more memory blocks BLK.

The block select circuit 23 includes a plurality of block selectors 34 corresponding to the memory blocks BLK. The plurality of block selectors 34 each include a plurality of the block select transistors 35 corresponding to the word lines WL and the select gate lines (SGD, SGS, SGSb). The block select transistor 35 is, for example, a field-effect type high voltage transistor. The block select transistors 35 have source electrodes each electrically connected to the corresponding word line WL or select gate line (SGD, SGS, SGSb). The drain electrodes are each electrically connected to the voltage supply line 31 via a wiring CG and the voltage select circuit 24. The gate electrodes are commonly connected to the corresponding block select line BLKSEL.

Note that the block select circuit 23 further includes a plurality of transistors (not illustrated). The plurality of transistors are field-effect type high voltage transistors connected between the select gate lines (SGD, SGS, SGSb) and the voltage supply lines to which the ground voltage is supplied. The plurality of transistors supply the select gate lines (SGD, SGS, SGSb) included in the non-selected memory blocks BLK with the ground voltage. Note that the plurality of word lines WL included in the non-selected memory blocks BLK enter a floating state.

The voltage select circuit 24 includes a plurality of voltage selectors 36 corresponding to the word lines WL and the select gate lines (SGD, SGS, SGSb). The plurality of voltage selectors 36 each include a plurality of the voltage select transistors 37. The voltage select transistor 37 is, for example, a field-effect type high voltage transistor. The voltage select transistors 37 have source terminals each electrically connected to the corresponding word line WL or the select gate line (SGD, SGS, SGSb) via the wiring CG and the block select circuit 23. The drain terminals are each electrically connected to the corresponding voltage supply line 31. The gate electrodes are each connected to the corresponding voltage select line 33.

The illustrated example illustrates an example in which the wiring CG is connected to the voltage supply line 31 via one voltage select transistor 37. However, such a configuration is merely an example, and the specific configurations are appropriately adjustable. For example, the wirings CG may be connected to the voltage supply line 31 via the two or more voltage select transistors 37.

The sense amplifier module SAM includes, for example, a plurality of sense amplifier units corresponding to the plurality of bit lines BL. The sense amplifier units each include a sense amplifier connected to the bit line BL. The sense amplifier includes a sense circuit connected to the bit line BL, a voltage transfer circuit connected to the bit line BL, and a latch circuit connected to the sense circuit and the voltage transfer circuit. The sense circuit includes a sense transistor that turns ON according to a voltage or a current of the bit line BL and a wiring charged or discharged according to the ON/OFF state of the sense transistor. The latch circuit latches data of “1” or “0” according to the voltage of this wiring. According to the data latched to this latch circuit, the voltage transfer circuit electrically conducts the bit line BL with any of two voltage supply lines.

In response to command data held in a command register, the sequencer SQC outputs an internal control signal that controls the voltage generate circuit VG, the address decoder 22, the block select circuit 23, the voltage select circuit 24, and the sense amplifier module SAM.

[Structure of Memory Die MD]

FIG. 2 is a schematic plan view of the memory die MD. FIG. 3 is a schematic perspective view illustrating a configuration of a part of the memory die MD. FIG. 4 is a schematic enlarged view of a part indicated by A in FIG. 2. FIG. 5 is a schematic cross-sectional view of a structure illustrated in FIG. 4 taken along the line B-B′ and viewed along the arrow direction. FIG. 6 is a schematic enlarged view of a part indicated by C in FIG. 5. FIG. 7 is a schematic enlarged view of a part indicated by D in FIG. 2.

Note that FIG. 3 to FIG. 7 are drawings to describe the schematic configuration of the memory die MD and do not describe the specific number of configurations, shape, arrangement, or the like. For example, in the example of FIG. 3, each memory block BLK includes eight conductive layers 110 arranged in the Z-direction. However, for example, as illustrated in FIG. 5 as an example, the memory block BLK may include nine or more conductive layers 110. For example, in the example of FIG. 4, the bit lines BL are disposed in only a part of a region of a memory hole region R_(MH) described later. However, the bit lines BL are disposed in the entire memory hole region R_(MH).

For example, as illustrated in FIG. 2, the memory die MD includes a semiconductor substrate 100. In the illustrated example, the semiconductor substrate 100 includes four memory cell array regions R_(MCA) arranged in the X-direction and the Y-direction. The memory cell array region R_(MCA) includes a plurality of memory hole regions R_(MH) arranged in the X-direction and a plurality of contact connect regions R_(C4T) disposed between the memory hole regions R_(MH). Hook-up regions R_(HU) arranged in the X-direction are disposed on both end portions in the X-direction of the memory cell array region R_(MCA). These regions extend in the Y-direction. Additionally, a plurality of contact connect regions R_(BLT) arranged in the X-direction corresponding to the plurality of memory hole regions R_(MH) arranged in the X-direction are disposed on one end portion in the Y-direction of the memory cell array region R_(MCA). A peripheral region R_(P) is disposed in an end portion in the Y-direction of the semiconductor substrate 100. The peripheral region R_(P) extends in the X-direction along the end portion in the Y-direction of the semiconductor substrate 100.

In the illustrated example, the hook-up regions R_(HU) are disposed in both end portions in the X-direction of the memory cell array region R_(MCA). However, such a configuration is merely an example, and the specific configurations are appropriately adjustable. For example, the hook-up region R_(HU) may be disposed in one end portion in the X-direction of the memory cell array region R_(MCA), not both end portions in the X-direction. Alternatively, the hook-up region R_(HU) may be disposed at the center position or a position near the center in the X-direction of the memory cell array region R_(MCA).

For example, as illustrated in FIG. 3, the memory die MD includes the semiconductor substrate 100, a transistor layer L_(TR) disposed on the semiconductor substrate 100, a wiring layer D0 disposed above the transistor layer L_(TR), a wiring layer D1 disposed above the wiring layer D0, a wiring layer D2 disposed above the wiring layer D1, a memory cell array layer L_(MCA) disposed above the wiring layer D2, a wiring layer M0 disposed above the memory cell array layer L_(MCA), a wiring layer M1 disposed above the wiring layer M0, and a wiring layer M2 disposed above the wiring layer M1.

[Structure of Semiconductor Substrate 100]

The semiconductor substrate 100 is, for example, a semiconductor substrate made of P type silicon (Si) containing P type impurities, such as boron (B). For example, as illustrated in FIG. 3, on the surface of the semiconductor substrate 100, a plurality of active regions 100A and an insulating layer STI disposed between the two active regions 100A adjacent in the X-direction or the Y-direction are disposed. The active region 100A contains N-type impurities, such as phosphorus (P), and P-type impurities, such as boron (B). The respective plurality of active regions 100A function as a part of a plurality of transistors Tr or the like constituting the peripheral circuit PC.

[Structure of Transistor Layer L_(TR)]

For example, as illustrated in FIG. 3, a plurality of gate insulating films gi are disposed on the upper surface of the semiconductor substrate 100. Gate electrodes gc are disposed on the upper surfaces of the plurality of gate insulating films gi. The respective regions of the semiconductor substrate 100 and the plurality of gate electrodes gc are each connected to contact CS.

The respective plurality of gate electrodes gc function as gate electrodes of the plurality of transistors Tr or the like constituting the peripheral circuit PC. For example, the gate electrode gc may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like.

The contact CS extends in the Z-direction and has a lower end connected to the semiconductor substrate 100 or the upper surface of the gate electrode gc. An impurity region containing N-type impurities or P-type impurities is disposed in a connecting part between the contact CS and the semiconductor substrate 100. For example, the contact CS may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like.

[Structures of Wiring Layers D0, D1, D2]

For example, as illustrated in FIG. 3, a plurality of wirings included in the wiring layers D0, D1, D2 are electrically connected to at least one of configurations in the memory cell array MCA or configurations in the peripheral circuit PC.

The wiring layers D0, D1, D2 include a plurality of wirings d0, d1, d2, respectively. For example, the plurality of wirings d0, d1, d2 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like.

Between the wiring d0 and the wiring d1, a contact C1 extending in the Z-direction is disposed. Between the wiring d1 and the wiring d2, a contact C2 extending in the Z-direction is disposed. For example, the contacts C1, C2 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like.

[Structure of Memory Cell Array Layer L_(MCA) in Memory Hole Region R_(MH)]

For example, as illustrated in FIG. 3, the plurality of memory blocks BLK arranged in the Y-direction are disposed in the memory cell array layer L_(MCA). For example, as illustrated in FIG. 4, the memory block BLK includes the plurality of string units SU arranged in the Y-direction. An inter-block insulating layer ST, such as silicon oxide (SiO₂), is disposed between the two memory blocks BLK adjacent in the Y-direction. An inter-string unit insulating layer SHE, such as silicon oxide (SiO₂), is disposed between the two string units SU adjacent in the Y-direction.

For example, as illustrated in FIG. 5, the memory block BLK includes the plurality of conductive layers 110 arranged in the Z-direction, a plurality of semiconductor layers 120 extending in the Z-direction, and respective plurality of gate insulating films 130 disposed between the plurality of conductive layers 110 and the plurality of semiconductor layers 120.

The conductive layer 110 is a substantially plate-shaped conductive layer extending in the X-direction. The conductive layer 110 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like. For example, the conductive layer 110 may contain polycrystalline silicon containing impurities, such as phosphorus (P) or boron (B), or the like. Between the plurality of conductive layers 110 arranged in the Z-direction, insulating layers 101, such as silicon oxide (SiO₂), are disposed.

A conductive layer 111 is disposed below the conductive layer 110. For example, the conductive layer 111 may contain polycrystalline silicon containing impurities, such as phosphorus (P) or boron (B), or the like. Between the conductive layer 111 and the conductive layer 110, the insulating layer 101, such as silicon oxide (SiO₂), is disposed.

A conductive layer 112 is disposed below the conductive layers 111. The conductive layer 112 includes a semiconductor layer 113 connected to lower ends of the semiconductor layers 120 and a conductive layer 114 connected to a lower surface of the semiconductor layer 113. For example, the semiconductor layer 113 may contain polycrystalline silicon containing impurities, such as phosphorus (P) and boron (B), or the like. The conductive layer 114 may include, for example, a conductive layer of a metal, such as tungsten (W), tungsten silicide, or the like, or another conductive layer. Between the conductive layer 112 and the conductive layers 111, the insulating layers 101, such as silicon oxide (SiO₂), are disposed.

The conductive layer 112 functions as the source line SL (FIG. 1). The source line SL is, for example, disposed in common corresponding to all of the memory blocks BLK included in the memory cell array region R_(MCA) (FIG. 2).

The conductive layers 111 function as gate electrodes of the source-side select gate line SGSb (FIG. 1) and the plurality of source-side select transistors STSb connected to the source-side select gate line SGSb. The conductive layers 111 are electrically independent in every memory block BLK.

Among the plurality of conductive layers 110, one or a plurality of conductive layers 110 positioned at the lowermost function as the source-side select gate line SGS (FIG. 1) and gate electrodes of the plurality of source-side select transistors STS connected to the source-side select gate line SGS. The plurality of conductive layers 110 are electrically independent in every memory block BLK.

A plurality of conductive layers 110 positioned upward of this layer function as the word lines WL (FIG. 1) and gate electrodes of the plurality of memory cells MC (FIG. 1) connected to the word lines WL. The plurality of conductive layers 110 are each electrically independent in every memory block BLK.

One or a plurality of conductive layers 110 positioned upward of this layer function as the drain-side select gate line SGD and gate electrodes of the plurality of drain-side select transistors STD (FIG. 1) connected to the drain-side select gate line SGD. The plurality of conductive layers 110 have widths in the Y-direction smaller than those of the other conductive layers 110. Between the two conductive layers 110 adjacent in the Y-direction, the inter-string unit insulating layer SHE is disposed. The plurality of conductive layers 110 are each electrically independent in every string unit SU.

For example, as illustrated in FIG. 4, the semiconductor layers 120 are arranged in the X-direction and the Y-direction in a predetermined pattern. The semiconductor layers 120 function as the channel regions of the plurality of memory cells MC and the select transistors (STD, STS, STSb) included in one memory string MS (FIG. 1). The semiconductor layer 120 is, for example, a semiconductor layer, such as polycrystalline silicon (Si). For example, as illustrated in FIG. 5, the semiconductor layer 120 has a substantially closed-bottomed cylindrical shape and includes an insulating layer 125, such as silicon oxide, in the center part. The outer peripheral surfaces of the semiconductor layers 120 are each surrounded by the conductive layers 110 and are opposed to the conductive layers 110.

On the upper end portion of the semiconductor layer 120, an impurity region 121 containing N-type impurities, such as phosphorus (P), is disposed. The impurity region 121 is connected to the bit line BL via a contact Ch and a contact Vy (FIG. 4).

On the lower end portion of the semiconductor layer 120, an impurity region 122 containing N-type impurities, such as phosphorus (P), is disposed. The impurity region 122 is connected to the semiconductor layer 113 in the conductive layer 112. In the semiconductor layer 120, a part positioned immediately above the impurity region 122 functions as a channel region of the source-side select transistor STSb. The outer peripheral surface of the impurity region 122 is surrounded by the conductive layer 111 and is opposed to the conductive layer 111.

The gate insulating film 130 has a substantially closed-bottomed cylindrical shape that covers the outer peripheral surface of the semiconductor layer 120. The gate insulating film 130 includes, for example, as illustrated in FIG. 6, a tunnel insulating film 131, an electric charge accumulating film 132, and a block insulating film 133, which are stacked between the semiconductor layer 120 and the conductive layers 110. The tunnel insulating film 131 and the block insulating film 133 are, for example, insulating films, such as silicon oxide (SiO₂). The electric charge accumulating film 132 is, for example, a film that can accumulate an electric charge of silicon nitride (Si₃N₄) or the like. The tunnel insulating film 131, the electric charge accumulating film 132, and the block insulating film 133, which have substantially cylindrical shapes, extend in the Z-direction along the outer peripheral surface of the semiconductor layer 120.

FIG. 6 illustrates an example in which the gate insulating film 130 includes the electric charge accumulating film 132, such as silicon nitride. However, the gate insulating film 130 may include, for example, a floating gate of polycrystalline silicon containing N type or P type impurities or the like.

[Structure of Memory Cell Array Layer L_(MCA) in Contact Connect Region R_(C4T)]

For example, as illustrated in FIG. 7, the contact connect region R_(C4T) includes two insulating layers ST_(O) arranged in the Y-direction between the two inter-block insulating layers ST arranged in the Y-direction. The insulating layer ST_(O) contains, for example, silicon oxide (SiO₂). Between these two insulating layers ST_(O), a contact connect sub-region r_(C4T) is disposed. Between the inter-block insulating layer ST and the insulating layer ST_(O), a conductive layer connect sub-region r₁₁₀ is disposed. These regions extend in the X-direction along the inter-block insulating layer ST.

The contact connect sub-region r_(C4T) includes a plurality of contacts C4 arranged in the X-direction and insulating layers 110A that cover the outer peripheral surfaces of the plurality of contacts C4. The contact C4 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN) and a metal film, such as tungsten (W), or the like. The contact C4 extends in the Z-direction, has an upper end connected to a wiring m0 in the wiring layer M0, and has a lower end connected to the wiring d2 in the wiring layer D2. The insulating layer 110A may include, for example, an insulating layer, such as silicon nitride (SiN).

The conductive layer connect sub-region r₁₁₀ includes a narrow-width portion 110 _(C4T) of the conductive layers 110. The plurality of conductive layers 110 included in the two memory hole regions R_(MH) adjacent in the X-direction are electrically conducted with one another via the narrow-width portion 110 _(C4T). In the illustrated example, one of the two conductive layer connect sub-regions r₁₁₀ corresponding to one memory block BLK includes the narrow-width portions 110 _(C4T) of the three conductive layers 110 that function as the drain-side select gate lines SGD. The other one of these two conductive layer connect sub-region r₁₁₀ includes the narrow-width portions 110 _(C4T) of the two conductive layers 110 that function as the drain-side select gate lines SGD.

[Structure of Memory Cell Array Layer L_(MCA) in Hook-Up Region R_(HU)]

As illustrated in FIG. 3, the hook-up region R_(HU) includes a plurality of contacts CC and a plurality of contacts C4. A plurality of the contacts CC are provided corresponding to each of the memory blocks BLK. The plurality of the contacts CC corresponding to one of the memory blocks BLK are arranged in the X-direction. A plurality of the contacts C4 are provided corresponding to each of the memory blocks BLK. The plurality of the contacts C4 corresponding to one of the memory blocks BLK are arranged in the X-direction.

End portions in the X-direction of the plurality of conductive layers 110 are disposed in regions near the contacts CC. The plurality of end portions have positions in the X-direction different from one another. Thus, in the hook-up region R_(HU), a structure having a substantially staircase pattern disposed corresponding to the memory blocks BLK is formed. Additionally, the plurality of contacts CC extend in the Z-direction and have lower ends connected to the end portions in the X-direction of the conductive layers 110. For example, the contact CC may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as tungsten (W), or the like.

In the illustrated example, the plurality of contacts CC corresponding to one memory block BLK are arranged in a row in the X-direction. However, such a configuration is merely an example, and the specific configurations are appropriately adjustable. For example, the plurality of contacts CC corresponding to one memory block BLK may be arranged in two rows in the X-direction or may be arranged in three or more rows.

Similarly to the contact connect sub-region r_(C4T) that has been described with reference to FIG. 7, the plurality of contacts C4 arranged in the X-direction and insulating layers (not illustrated) that cover the outer peripheral surfaces of the plurality of contacts C4 are disposed in a region near the contacts C4. As illustrated in FIG. 3, the contacts C4 extend in the Z-direction, have upper ends connected to the wirings m0 in the wiring layers M0, and have lower ends connected to the wirings d2 in the wiring layer D2.

[Structure of Memory Cell Array Layer L_(MCA) in Contact Connect Region R_(BLT)]

The contact connect region R_(BLT) (FIG. 2) includes a plurality of contacts. The plurality of contacts extend in the Z-direction, have upper ends connected to ones functioning as the bit lines BL among the wirings m0 in the wiring layer M0, and have lower ends connected to the wirings d2 in the wiring layer D2.

[Structures of Wiring Layers M0, M1, M2]

For example, as illustrated in FIG. 3, the plurality of wirings included in the wiring layers M0, M1, M2 are electrically connected to, for example, at least one of the configurations in the memory cell array L_(MCA) and the configurations in the transistor layer L_(TR).

The wiring layer M0 includes the plurality of wirings m0. For example, the plurality of wirings m0 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as copper (Cu), or the like. The plurality of wirings m0 basically extend in the Y-direction. Note that a part of the plurality of wirings m0 function as the bit lines BL (FIG. 1). For example, as illustrated in FIG. 4, the bit lines BL are arranged in the X-direction and extend in the Y-direction. The plurality of bit lines BL are each connected to one semiconductor layer 120 included in each string unit SU.

The wiring layer M1 includes the plurality of wirings m1. For example, the plurality of wirings m1 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as copper (Cu), or the like. The plurality of wirings m1 basically extend in the X-direction.

For example, as illustrated in FIG. 3, the wiring layer M2 includes the plurality of wirings m2. For example, the plurality of wirings m2 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as aluminum (Al), or the like. The plurality of wirings m2 basically extend in the Y-direction. Widths of the plurality of wirings m2 in the X-direction may be greater than widths of wirings d0, d1, d2 in the X-direction or the Y-direction (in the direction perpendicular to the direction in which the wirings d0, d1, d2 extend).

Between the wiring m0 and the wiring m1, a contact V0 extending in the Z-direction is disposed. Between the wiring m1 and the wiring m2, a contact V1 extending in the Z-direction is disposed. For example, the contacts V0, V1 may include a stacked film of a barrier conductive film, such as titanium nitride (TiN), and a metal film, such as copper (Cu) or aluminum (Al), or the like.

[Layout Patterns in Wiring Layers D0, D1, D2, M0, M1, M2]

As described with reference to FIG. 3, the memory blocks BLK each include the plurality of conductive layers 110 arranged in the Z-direction, and the respective plurality of conductive layers 110 are connected to the lower end portions of the contacts CC extending in the Z-direction. The respective contacts CC have upper end portions connected to a part of the plurality of wirings m0. Hereinafter, these wirings m0 are referred to as “wirings m0 a” in some cases. The plurality of wirings m0 a are arranged in the X-direction and the Y-direction corresponding to the contacts CC and each extend in the Y-direction. The plurality of wirings m0 a are each connected to the contact C4 disposed in the hook-up region R_(HU).

As illustrated in FIG. 8, the plurality of contacts C4 are connected to source regions of the plurality of transistors Tr disposed in the hook-up region R_(HU) via conductive members such as the plurality of wirings d0, d1, d2 and the contacts CS, C1, C2. The plurality of transistors Tr each function as the block select transistor 35 (FIG. 1).

As illustrated in FIG. 9, the plurality of transistors Tr (block select transistors 35) have drain regions connected to another transistor Tr functioning as the voltage select transistors 37 (FIG. 1) via conductive members such as the plurality of wirings d0, d1, d2, m0, m1, m2 and the plurality of contacts CS, C1, C2, C4, V0, V1. Hereinafter, the plurality of wirings m2 electrically connected between the two transistors Tr are referred to as “wirings m2 a” in some cases. The plurality of wirings d1, d2 and the contacts C1, C2, C4 electrically connected between the block select transistors 35 and the wirings m2 a are referred to as “wiring d1 a,” “wiring d2 a, ” “contact C1 a, ” “contact C2 a, ” and “contact C4 a” in some cases, respectively. The plurality of wirings d1 a, d2 a, m2 a and the contacts C1 a, C2 a, C4 a each function as a part of the wiring CG (FIG. 1).

The wiring d1 a extends in the Y-direction and are arranged in the X-direction. For example, the number of the wirings d1 a may be same as the number of the conductive layers 110 included in one of the memory blocks BLK. In the illustrated example, the wiring d1 a are disposed in the hook-up region R_(HU).

The wiring d1 a has a lower surface connected to upper ends of a plurality of contacts C1 a arranged in the Y-direction. The respective contacts C1 a extend in the Z-direction. For example, the number of the contacts C1 a may be same as the number of the transistors Tr connected to the wirings d1 a or may be smaller than the number of the transistors Tr. For example, in the illustrated example, the number of the contacts C1 a is half of the number of the transistors Tr. That is, in the illustrated example, the two transistors arranged in the Y-direction have the drain region in common, and one contact C1 a is disposed corresponding to this drain region. The respective wirings d1 a are connected to the drain regions of the plurality of transistors Tr via the plurality of contacts C1 a.

The wiring d1 a has an upper surface connected to the lower end of one contact C2 a or the lower ends of a plurality of contacts C2 a arranged in the Y-direction. The contacts C2 a each extend in the Z-direction and are disposed at an intersection part between the wiring d1 a and the wiring d2 a. For example, the number of the contacts C4 a may be same as the number of the wirings d2 a.

The contact C2 a has an upper end connected to the wiring d2 a. The wirings d2 a extend in the X-direction and are arranged in the Y-direction. For example, the number of the wirings d2 a may be same as the number of the wirings m2 a or may be an integral multiple of the number of the wirings m2 a. For example, when the number of the wirings d1 a and the number of the wirings m2 a are same and the number of the wirings d2 a is N times (N is a natural number) the number of the wirings m2 a, the N wirings d2 a are connected in parallel between one of the wirings d1 a and one of the wirings m2 a. In the illustrated example, the wirings d2 a are disposed from the hook-up region R_(HU) to a region outside the memory cell array region R_(MCA) (FIG. 2).

The wiring d2 a has an upper surface connected to a lower end of one contact C4 a. The contact C4 a extends in the Z-direction and is disposed at an intersection part between the wiring d2 a and the wiring m2 a. For example, the number of the contacts C4 a maybe same as the number of the wirings d2 a. In the illustrated example, the contacts C4 a are disposed in a region outside the memory cell array region R_(MCA) (FIG. 2).

The contact C4 a has an upper end connected to the wiring m2 a via conductive members such as the wirings m0, m1 and the contacts V0, V1. The wirings m2 a extend in the Y-direction and are arranged in the X-direction. For example, the number of the wirings m2 a may be same as the number of the conductive layers 110 included in the memory block BLK. Note that, in the illustrated example, the wirings m2 a are disposed in a region outside the memory cell array region R_(MCA) (FIG. 2).

Note that the positions of the wirings d2 a, the contacts C2 a, and the contacts C4 a in the Y-direction are appropriately adjustable.

For example, the positions of the wirings d2 a, the contacts C2 a, and the contacts C4 a in the Y-direction may be away from the end portions in the Y-direction of the wirings dla and the end portions in the Y-direction of the wirings m2 a in the Y-direction. For example, in a region on one side in the Y-direction than the wirings d2 a, the contacts C2 a, and the contacts C4 a, one or a plurality of contacts C1 a and one or a plurality of transistors Tr (block select transistors 35) may be disposed. Alternatively, in a region on the other side in the Y-direction than the wirings d2 a, the contacts C2 a, and the contacts C4 a, one or a plurality of contacts C1 a and one or a plurality of transistors Tr (block select transistors 35) may be disposed.

For example, in the example illustrated in FIG. 10, the number of the wirings d2 a is same as the number of the wirings m2 a. In such an example, the same number of the wirings d2 a, the contacts C2 a, and the contacts C4 a as the number of the wirings m2 a may be disposed in a region near the center (a region including the center position) in the Y-direction in the memory cell array region R_(MCA).

For example, in the example illustrated in FIG. 11, the number of the wirings d2 a is twice the number of the wirings m2 a. In such an example, the memory cell array region R_(MCA) may be equally divided into two in the Y-direction to form two regions R_(MCA2). Additionally, the same number of the wirings d2 a, the contacts C2 a, and the contacts C4 a as the number of the wirings m2 a may be disposed in respective regions near the center (regions including the center position) in the Y-direction in the two regions R_(MCA2).

For example, in the example illustrated in FIG. 12, the number of the wirings d2 a is three times the number of the wirings m2 a. In such an example, the memory cell array region R_(MCA) may be equally divided into three in the Y-direction to form three regions R_(MCA3). Additionally, the same number of the wirings d2 a, the contacts C2 a, and the contacts C4 a as the number of the wirings m2 a may be disposed in respective regions near the center (regions including the center position) in the Y-direction in the three regions R_(MCA3).

Similarly, in an example in which the number of the wirings d2 a is N (N is a natural number) times the number of the wirings m2 a, the memory cell array region R_(MCA) may be equally divided into N in the Y-direction to form N regions R_(MCAN), and the same number of the wirings d2 a, the contacts C2 a, and the contacts C4 a as the number of the wirings m2 a may be disposed in respective regions near the center (regions including the center position) in the Y-direction in the N regions R_(MCAN). Note that these N regions R_(MCAN) may each include the plurality of memory blocks BLK arranged in the Y-direction.

COMPARATIVE EXAMPLES

FIG. 13 illustrates a configuration according to a first comparative example. The configuration according to the first comparative example does not include the wirings d1 a as described with reference to FIG. 9. In the configuration according to the first comparative example, numbers of the wirings d2 a, the contacts C2 a, and the contacts C4 a are the same as a number of the contacts C1 a. Additionally, the configuration according to the first comparative example includes one wiring d1 corresponding to one contact C1 a, and each block select transistor 35 is connected to the wiring m2 a via the wiring d1, the wiring d2 a, the contact C2 a, and the contact C4 a. The wirings m2 a are connected to the voltage select transistors 37 (not illustrated) at one end portions in the Y-direction.

For example, compared with the configurations illustrated in FIG. 10 to FIG. 12, the number of wirings is large in the configuration, and this results in a complicated wiring pattern and there may be a case where miniaturization is difficult.

FIG. 14 illustrates a configuration in a second comparative example. The configuration according to the second comparative example does not include the wirings m2 a or the contacts C4 a as described with reference to FIG. 9. In the configuration according to the second comparative example, the block select transistors 35 and the voltage select transistors 37 are connected via only a configuration positioned downward of the memory cell array layer L_(MCA). That is, one end portion in the Y-direction of the wiring d1 a is connected to one end portion in the X-direction of the wiring d2 a, the other end portion in the X-direction of the wiring d2 a is positioned near the voltage select transistors 37, and the wiring d2 a is connected to the voltage select transistors 37 via the wirings d0, d1, d2 (not illustrated).

The number of wirings in the configuration is smaller than, for example, that of the configuration as illustrated in FIG. 13. This allows performing miniaturization comparatively easily.

Note that the numbers of wirings of the configurations described with reference to FIG. 10 to FIG. 12 are also smaller than that of, for example, the configurations illustrated in FIG. 13. This allows performing miniaturization comparatively easily.

[Wiring Resistance in Wiring CG]

FIG. 15 is a schematic graph to describe the wiring resistance in the wiring CG. The horizontal axis indicates positions in the Y-direction of the plurality of memory blocks BLK. The vertical axis indicates the wiring resistance in the wiring CG. The wiring resistance in the wiring CG may be, for example, a wiring resistance between the plurality of conductive layers 110 (FIG. 3) included in each memory block BLK and the voltage select transistors 37 (FIG. 1).

A property indicated by the solid line A in the drawing indicates a property in the first comparative example (FIG. 13). In the first comparative example, the plurality of wirings d2 a arranged in the Y-direction are disposed corresponding to the plurality of block select transistors 35 arranged in the Y-direction. The one end portions in the X-direction of the plurality of wirings d2 a are connected to the wirings m2 a extending in the Y-direction, and the connecting parts between the wirings m2 a and the wirings d2 a are dispersedly disposed in the Y-direction. Additionally, the wirings m2 a are connected to the voltage select transistors 37 via the one end portions in the Y-direction. In the configuration, among the plurality of block select transistors 35, the block select transistor 35 closer to the one end side in the Y-direction has a small voltage drop in the wiring m2 a, and the block select transistor 35 closer to the other end side in the Y-direction has a large voltage drop in the wiring m2 a. Therefore, as illustrated in FIG. 15, in the first comparative example, the wiring resistance in the wiring CG increases in proportion to the distance from the one end portion in the Y-direction. However, the wiring m2 a is made of aluminum (Al), which has a comparatively low resistivity, and the wiring resistance in the wiring m2 a is comparatively small. Therefore, a variation of the wiring resistance among the memory blocks BLK is comparatively small in the first comparative example. However, as described above, there may be a case where the configuration according to the first comparative example is difficult to be miniaturized.

A property indicated by the solid line B in the drawing indicates a property in the second comparative example (FIG. 14). In the second comparative example, the plurality of block select transistors 35 arranged in the Y-direction are connected to the wirings d1 a extending in the Y-direction in common via the plurality of contacts C1 a. Additionally, the wirings d1 a are connected to the voltage select transistors 37 via the one end portions in the Y-direction. In the configuration, among the plurality of block select transistors 35, the block select transistor 35 closer to the one end side in the Y-direction has a small voltage drop in the wiring d1 a, and the block select transistor 35 closer to the other end side in the Y-direction has a large voltage drop in the wiring d1 a. Therefore, as illustrated in FIG. 15, in the second comparative example, the wiring resistance in the wiring CG increases in proportion to the distance from the one end portion in the Y-direction. Here, the wiring d1 a is made of tungsten (W), which has a comparatively high resistivity, and the wiring resistance in the wiring d1 a is comparatively large. Therefore, in the second comparative example, the variation of the wiring resistance among the memory blocks BLK is comparatively large.

A property indicated by the solid line C in the drawing indicates a property of the configuration illustrated as an example in FIG. 10 of the semiconductor memory device according to the first embodiment. In the configuration, the plurality of block select transistors 35 arranged in the Y-direction are connected to the wirings d1 a extending in the Y-direction in common via the plurality of contacts C1 a. The wirings d1 a are connected to the wirings d2 a at the position near the center in the Y-direction of the memory cell array region R_(MCA). Additionally, the one end portions in the X-direction of the wirings d2 a are connected to the wirings m2 a extending in the Y-direction and are connected to the voltage select transistors 37 via the wirings m2 a. In the configuration, among the plurality of block select transistors 35, the block select transistor 35 close to the position near the center in the Y-direction in the memory cell array region R_(MCA) has a small voltage drop in the wiring d1 a, and the block select transistor 35 far from the position near the center in the Y-direction has a large voltage drop in the wiring d1 a. Therefore, as illustrated in FIG. 15, in this configuration, the wiring resistance in the wiring CG increases in proportion to a distance from the vicinity of the center in the Y-direction in the memory cell array region R_(MCA).

In the configuration, for example, compared with the second comparative example (FIG. 14), a variation of the distances from the block select transistors 35 to the wirings d2 a in the Y-direction is decreased, thus ensuring decreasing the variation of the wiring resistances in the wirings d1 a. Therefore, in this configuration, the variation of the wiring resistances among the memory blocks BLK can be decreased compared with that of the second comparative example.

A property indicated by the dotted line D in the drawing indicates a property of the configuration illustrated as an example in FIG. 11 of the semiconductor memory device according to the first embodiment. In the configuration, the plurality of block select transistors 35 arranged in the Y-direction are connected to the wirings d1 a extending in the Y-direction in common via the plurality of contacts C1 a. The wirings d1 a are connected to the wirings d2 a at the position near the center in the Y-direction in the region R_(MCA2). Additionally, the one end portions in the X-direction of the wirings d2 a are connected to the wirings m2 a extending in the Y-direction and are connected to the voltage select transistors 37 via the wirings m2 a. In the configuration, among the plurality of block select transistors 35, the block select transistor 35 close to the position near the center in the Y-direction in the region R_(MCA2) has a small voltage drop in the wiring d1 a and the block select transistor 35 far from the position near the center in the Y-direction has a large voltage drop in the wiring d1 a. Therefore, as illustrated in FIG. 15, in this configuration, the wiring resistance in the wiring CG becomes the minimum value or the local minimal value at the position near the center in the Y-direction in the region R_(MCA2). Additionally, the wiring resistance in the wiring CG gradually increases as the distance from the position near the center increases.

In the configuration, for example, compared with the configuration illustrated as an example in FIG. 10, the variation of the distances in the Y-direction from the block select transistors 35 to the wirings d2 a is decreased, thus ensuring decreasing the variation of the wiring resistances in the wirings dla. Therefore, in the configuration, the variation of the wiring resistances among the memory blocks BLK can be smaller than that of the configuration illustrated as an example in FIG. 10. In the configuration, the wirings dla extending in the Y-direction are connected to the plurality of block select transistors 35 arranged in the Y-direction in common, and the two wirings d2 a different in the positions in the Y-direction are connected in parallel between the wirings d1 a and the wirings m2 a. Accordingly, among the plurality of block select transistors 35 disposed between the two wirings d2, the block select transistor 35 farther from one wiring d2 is closer to the other wiring d2. That is, the block select transistor 35 having a larger wiring resistance to the one wiring d2 has a small wiring resistance to the other wiring d2. Accordingly, the variation of the wiring resistances among the memory blocks BLK can be further effectively decreased.

A property indicated by the dash-dotted line E in the drawing indicates a property of the configuration illustrated as an example in FIG. 12 of the semiconductor memory device according to the first embodiment. In this configuration, the plurality of block select transistors 35 arranged in the Y-direction are connected to the wirings d1 a extending in the Y-direction in common via the plurality of contacts C1 a. The wirings d1 a are connected to the wirings d2 a at the position near the center in the Y-direction of the region R_(MCA3). Additionally, the one end portions in the X-direction of the wirings d2 a are connected to the wirings m2 a extending in the Y-direction and are connected to the voltage select transistors 37 via the wirings m2 a. In the configuration, among the plurality of block select transistors 35, the block select transistor 35 close to the position near the center in the Y-direction of the region R_(MCA3) has a small voltage drop in the wiring dla and the block select transistor 35 far from the position near the center in the Y-direction has a large voltage drop in the wiring d1 a. Therefore, as illustrated in FIG. 15, in the configuration, the wiring resistance in the wiring CG becomes the minimum value or the local minimal value at the position near the center in the Y-direction of the region R_(MCA3). Additionally, the wiring resistance in the wiring CG gradually increases as the distance from the position near the center increases.

In the configuration, for example, compared with the configuration illustrated as an example in FIG. 11, the variation of the distances in the Y-direction from the block select transistors 35 to the wirings d2 a is decreased, thus ensuring decreasing the variation of the wiring resistances in the wirings d1 a. Therefore, in the configuration, the variation of the wiring resistances among the memory blocks BLK can be smaller than that of the configuration illustrated as an example in FIG. 11. In the configuration, the wirings d1 a extending in the Y-direction are connected to the plurality of block select transistors 35 arranged in the Y-direction in common, and the three wirings d2 a different in the positions in the Y-direction are connected in parallel between the wirings d1 a and the wirings m2 a. Accordingly, among the plurality of block select transistors 35 disposed between the two wirings d2, the block select transistor 35 far from one wiring d2 is close to the other wiring d2. That is, the block select transistor 35 having a large wiring resistance to the one wiring d2 has a small wiring resistance to the other wiring d2. Accordingly, the variation of the wiring resistances among the memory blocks BLK can be further effectively decreased.

SECOND EMBODIMENT

FIG. 16 is a schematic perspective view illustrating a configuration of a part of a semiconductor memory device according to the second embodiment. FIG. 17 is a schematic perspective view in which a part of a configuration is omitted from the structure illustrated in FIG. 16. In FIG. 17, hatched lines are drawn to one wiring m2 b among the plurality of wirings m2 b arranged in the X-direction and the plurality of wirings and contacts that electrically conduct to the wiring m2 b.

The semiconductor memory device according to the second embodiment is configured basically similarly to the semiconductor memory device according to the first embodiment. However, the semiconductor memory device according to the second embodiment does not include the wiring layers D1, D2, M0, M1, M2, but instead includes wiring layers D1′, D2′, M0′, M1′, M2′. The wiring layers D1′, D2′, M0′, M1′, M2′ are configured basically similarly to the wiring layers D1, D2, M0, M1, M2 according to the first embodiment. However, a layout pattern of the wiring layers D1′, D2′, M0′, M1′, M2′ according to the second embodiment differs from a layout pattern of the wiring layers D1, D2, M0, M1, M2 according to the first embodiment.

As illustrated in FIG. 16, the drain regions of the plurality of transistors Tr functioning as the block select transistors 35 (FIG. 1) are electrically connected to another transistor Tr functioning as the voltage select transistors 37 (FIG. 1) via conductive members such as the plurality of wirings d0, d1, d2, m0, m1, m2 and the plurality of contacts CS, C1, C2, C4, V0, V1. Hereinafter, the plurality of wirings m2 electrically connected between the two transistors Tr are referred to as “wirings m2 b” in some cases. Additionally, the plurality of wirings d1, m0, m1 and contacts C1, C4, V1 electrically connected between the block select transistors 35 and the wirings m2 b are referred to as “wiring d1 b,” “wiring m0 b” (FIG. 17), “wiring m1 b, ” “contact C1 b” (FIG. 17), “contact C4 b” (FIG. 17), and “contact V1 b” in some cases, respectively. The plurality of wirings d1 b, m0 b, m1 b, m2 b and contacts C1 b, C4 b, V1 b each function as a part of the wiring CG (FIG. 1). In the illustrated example, the transistor Tr functioning as the voltage select transistors 37 (FIG. 1) and the contact C4 electrically connected between the voltage select transistors 37 and the wiring m2 b are disposed in the contact connect region R_(C4T) (FIG. 2).

The wirings d1 b extend in the Y-direction and are arranged in the X-direction. For example, the number of the wirings d1 b may be same as the number of the conductive layers 110 included in the memory block BLK. In the illustrated example, the wirings d1 b are disposed in the hook-up region R_(HU).

The wirings d1 b have lower surfaces connected to upper ends of the plurality of contacts C1 b (FIG. 17) arranged in the Y-direction. The respective contacts C1 b extend in the Z-direction. For example, the number of the contacts C1 b may be same as the number of the transistors Tr connected to the wirings d1 b or may be smaller than the number of the transistors Tr. For example, in the illustrated example, the number of the contacts C1 b is the half of the number of the transistors Tr. The respective wirings d1 b are connected to the drain regions of the plurality of transistors Tr via the plurality of contacts C1 b.

The wirings d1 b have upper surfaces connected to a lower end of one contact C4 b or lower ends of the plurality of contacts C4 b arranged in the Y-direction via conductive members such as the wirings d2 and the like. The respective contacts C4 b extend in the Z-direction and are disposed at intersection parts between the wirings d1 b and the wirings m0 b. In the illustrated example, the contact C4 b is disposed between the two contacts C4 arranged in the X-direction. The two contacts C4 have upper ends each connected to the wiring m0 a. For example, the number of the contacts C4 b may be same as the number of the wirings m0 b. Note that in the illustrated example, the contacts C4 b are disposed in the hook-up region R_(HU) (FIG. 2).

The contact C4 b has an upper end connected to the wiring m0 b. The wirings m0 b extend in the Y-direction and are arranged in the X-direction. In the illustrated example, the wiring m0 b is disposed between the two wirings m0 a arranged in the X-direction. For example, the number of the wirings m0 b may be same as the number of the wirings m1 b. In the illustrated example, the wirings m0 b are disposed in the hook-up region R_(HU).

The wiring m0 b has an upper surface connected to the wiring m1 b via the contact V0. The wirings m1 b extend in the X-direction and are arranged in the Y-direction. For example, the number of the wirings m1 b may be same as the number of the wirings m2 b or may be an integral multiple of the number of the wirings m2 b. For example, in a case where the number of the wirings d1 b is same as the number of the wirings m2 b and where the number of the wirings m1 b is N times (N is a natural number) the number of the wirings m2 b, the N wirings m1 b are connected in parallel between the wiring d1 b and the wiring m2 b. In the illustrated example, the wirings m1 b are disposed from the hook-up region R_(HU) to the memory cell array region R_(MCA) (FIG. 2).

The wiring m1 b has an upper surface connected to a lower end of one contact V1 b. The contact V1 b extends in the Z-direction and is disposed at an intersection part between the wiring m1 b and the wiring m2 b. For example, the number of the contacts V1 b may be same as the number of the wirings m1 b. In the illustrated example, the contacts V1 b are disposed in the memory cell array region R_(MCA).

The contact V1 b has an upper end connected to the wiring m2 b. The wirings m2 b extend in the Y-direction and are arranged in the X-direction. For example, the number of the wirings m2 b may be same as the number of the conductive layers 110 included in the memory block BLK. In the illustrated example, the wirings m2 b are disposed in the memory cell array region R_(MCA) (FIG. 2).

Positions of the wirings m0 b, the wirings m1 b, the contacts C4 b, and the contacts V1 b in the Y-direction are appropriately adjustable.

For example, the positions of the wirings m0 b, the wirings m1 b, the contacts C4 b, and the contacts V1 b in the Y-direction may be away from the end portions in the Y-direction of the wirings d1 b and the end portions in the Y-direction of the wirings m2 b in the Y-direction.

For example, in an example in which the number of the wirings m1 b is N (N is a natural number) times the number of the wirings m2 b, the memory cell array region R_(MCA) may be equally divided into N in the Y-direction to form the N regions R_(MCAN), and the same number of the wirings m0 b, the wirings m1 b, the contacts C4 b, and the contacts V1 b as the number of the wirings m2 b may be disposed in respective regions near the center (regions including the center position) in the Y-direction of the N regions R_(MCAN).

THIRD EMBODIMENT

FIG. 18 is a schematic perspective view illustrating a configuration of a part of a semiconductor memory device according to the third embodiment. FIG. 19 is a schematic perspective view in which a part of the configuration is omitted from the structure illustrated in FIG. 18. In FIG. 19, hatched lines are drawn to the plurality of wirings and contacts that electrically conduct to one wiring m2 c among the plurality of wirings m2 c illustrated as an example in FIG. 18.

The semiconductor memory device according to the third embodiment is configured basically similarly to the semiconductor memory device according to the second embodiment. However, the semiconductor memory device according to the third embodiment does not include the wiring layers M0′, M1′, M2′ but instead includes wiring layers M0″, M1″, M2″. The wiring layers M0″, M1″, M2″ are configured basically similarly to the wiring layers M0′, M1′, M2′ according to the second embodiment. However, a layout pattern of the wiring layers M0″, M1″, M2″ according to the third embodiment differs from the layout pattern of the wiring layers M0′, M1′, M2′ according to the second embodiment.

As illustrated in FIG. 18, the drain regions of the plurality of transistors Tr functioning as the block select transistors 35 (FIG. 1) are electrically connected to the other transistors Tr (FIG. 18) functioning as the voltage select transistors 37 (FIG. 1) via conductive members such as the plurality of wirings d0, d1, d2, m0, m1, m2, and the plurality of contacts C1, C4, V1 (FIG. 19). Hereinafter, the plurality of wirings m2 electrically connected between the two transistors Tr are referred to as “wirings m2 c” in some cases. Additionally, the plurality of wirings m1 and contacts V1 electrically connected between the block select transistors 35 and the wirings m2 c are referred to as “wirings m1 c” (FIG. 19) and “contacts V1 c” (FIG. 19) in some cases, respectively. The plurality of wirings m1 c, m2 c and the contacts V1 c each function as a part of the wiring CG (FIG. 1). In the illustrated example, the transistor Tr functioning as the voltage select transistors 37 (FIG. 1) and the contact C4 electrically connected between the voltage select transistors 37 and the wiring m2 c are disposed in the contact connect region R_(C4T) (FIG. 2).

The contact C4 b according to the third embodiment has an upper end connected to the contact V1 c via conductive members such as the wirings m0, m1 c (FIG. 19) and the like. The contacts V1 c extend in the Z-direction and are disposed at positions corresponding to the wirings d1 b and the wirings m2 c (FIG. 18). For example, the number of the contacts V1 c may be same as the number of the wirings m2 c or may be an integral multiple of the number of the wirings m2 c. For example, when the number of the wirings d1 b is same as the number of the wirings m2 c and when the number of the contacts V1 c is N times (N is a natural number) the number of the wirings m2 c, the N contacts C4 b, V1 c are connected in parallel between the wiring d1 b and the wiring m2 c. In the illustrated example, the contacts V1 c are disposed in the hook-up region R_(HU).

The contact V1 c has an upper end connected to the wiring m2 c (FIG. 18). The wirings m2 c extend in the Y-direction and are arranged in the X-direction. For example, the number of the wirings m2 c may be same as the number of the conductive layers 110 included in the memory block BLK. In the illustrated example, the wirings m2 c are disposed in the hook-up region R_(HU) (FIG. 2).

Note that the positions of the wirings m1 c, the contacts C4 b, and the contacts V1 c in the Y-direction are appropriately adjustable.

For example, the positions of the wirings m1 c, the contacts C4 b, and the contacts V1 c in the Y-direction may be away from the end portions in the Y-direction of the wirings d1 b and the end portions in the Y-direction of the wirings m2 c in the Y-direction.

For example, in an example in which the numbers of the wirings m1 c, the contacts C4 b, and the contacts V1 c are N (N is a natural number) times the number of the wirings d1 b, the memory cell array region R_(MCA) may be equally divided into N in the Y-direction to form N regions R_(MCAN), and the same number of the wirings m1 c, the contacts C4 b, and the contacts V1 c as the number of the wirings d1 b may be disposed in respective regions near the center (regions including the center position) in the Y-direction of the N regions R_(MCAN).

OTHER EMBODIMENTS

The semiconductor memory devices according to the first embodiment to the third embodiment have been described above. However, the semiconductor memory devices according to these embodiments are merely examples, and the specific configuration, the operation, and the like are appropriately adjustable.

For example, in the first embodiment to the third embodiment, all of the wirings d1 a, d1 b, m2 a, m2 b, m2 c extend in one direction from the one end to the other end of the memory cell array region R_(MCA) in the Y-direction. However, this configuration is merely one example and the specific configuration is appropriately adjustable. For example, the wirings d1 a, d1 b, m2 a, m2 b, m2 c may include a part extending in the X-direction. The wiring d1 a, d1 b, m2 a, m2 b, m2 c may be formed in substantially straight lines via wirings of other wiring layers or the like.

Moreover, for example, in the first embodiment to the third embodiment, both of the wirings d1 a, d1 b are formed of one wiring that is continuously formed. However, this configuration is merely one example and the specific configuration is appropriately adjustable. For example, in a case where the number of the wirings d2 a is N times the number of the wirings m2 a in the first embodiment, as illustrated as an example in FIG. 20 or FIG. 21, the wirings d1 a may be divided into N or less of wirings d1 a′ in the Y-direction. That is, instead of the wiring d1 a, the N or less wirings d1 a′ arranged in the Y-direction may be disposed. The respective wirings d1 a′ are electrically connected between the wirings m2 a and the block select transistors 35. Similarly, when the number of the wirings m1 b is N times the number of the wirings m2 b in the second embodiment or when the number of the contacts V1 c is N times the number of the wirings m2 c in the third embodiment, the wiring d1 b may be divided into N or less wirings in the Y-direction.

[Others]

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms: furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions. 

What is claimed is:
 1. A semiconductor memory device comprising: a semiconductor substrate; a plurality of memory blocks spaced from the semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate, the plurality of memory blocks being arranged in a second direction intersecting with the first direction; a first wiring that is farther from the semiconductor substrate than the plurality of memory blocks in the first direction; a second wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction; a first contact electrically connected between the first wiring and the second wiring; a first transistor disposed on the semiconductor substrate, the first transistor being electrically connected between the second wiring and a first memory block among the plurality of memory blocks; and a second transistor disposed on the semiconductor substrate, the second transistor being electrically connected between the second wiring and a second memory block among the plurality of memory blocks, wherein the first contact is disposed between the first transistor and the second transistor in the second direction.
 2. The semiconductor memory device according to claim 1, comprising a third transistor disposed on the semiconductor substrate, the third transistor being electrically connected between the second wiring and a third memory block among the plurality of memory blocks; and a fourth transistor disposed on the semiconductor substrate, the fourth transistor being electrically connected between the second wiring and a fourth memory block among the plurality of memory blocks, wherein the first contact is disposed between the third transistor and the fourth transistor in the second direction.
 3. The semiconductor memory device according to claim 1, comprising: a second contact electrically connected between the first wiring and the second wiring, the second contact having a position different from a position of the first contact in the second direction; and a fifth transistor disposed on the semiconductor substrate, the fifth transistor being electrically connected between the second wiring and a fifth memory block among the plurality of memory blocks, wherein the second contact is disposed between the second transistor and the fifth transistor in the second direction, and the second transistor is disposed between the first contact and the second contact in the second direction.
 4. The semiconductor memory device according to claim 1, comprising: a third wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction, the third wiring having a position different from a position of the second wiring in the second direction; a third contact electrically connected between the first wiring and the third wiring, the third contact having a position different from a position of the first contact in the second direction; a sixth transistor disposed on the semiconductor substrate, the sixth transistor being electrically connected between the third wiring and a sixth memory block among the plurality of memory blocks; and a seventh transistor disposed on the semiconductor substrate, the seventh transistor being electrically connected between the third wiring and a seventh memory block among the plurality of memory blocks, wherein the third contact is disposed between the sixth transistor and the seventh transistor in the second direction.
 5. The semiconductor memory device according to claim 4, wherein the second wiring and the third wiring are arranged in the second direction.
 6. The semiconductor memory device according to claim 1, wherein the memory block includes: a plurality of conductive layers arranged in the first direction; a plurality of semiconductor layers extending in the first direction and opposed to the plurality of conductive layers respectively; and a plurality of gate insulating layers disposed between the plurality of conductive layers and the plurality of semiconductor layers respectively.
 7. The semiconductor memory device according to claim 1, wherein the first wiring has a connecting surface connected to the first contact via one or a plurality of conductive members.
 8. The semiconductor memory device according to claim 1, wherein the second wiring has a connecting surface connected to the first contact via one or a plurality of conductive members.
 9. The semiconductor memory device according to claim 1, further comprising N (N is an integer of two or more) first contacts, wherein when the first wiring is divided into N regions in the second direction, each region is defined as a first region, the first contacts are disposed in each of the N first regions arranged in the second direction.
 10. The semiconductor memory device according to claim 1, comprising M (M is an integer of two or more) first contacts, wherein when the second wiring is divided into M regions in the second direction, each region is defined as a second region, the first contacts are disposed in each of the M second regions arranged in the second direction.
 11. The semiconductor memory device according to claim 1, wherein the first wiring has a resistance value per unit length smaller than a resistance value per unit length of the second wiring.
 12. The semiconductor memory device according to claim 1, wherein the first wiring extends in the second direction, the second wiring extends in the second direction, a width of the first wiring in a third direction intersecting with the first direction and the second direction is greater than a width of the second wiring in the third direction.
 13. The semiconductor memory device according to claim 1, wherein the first wiring contains copper or aluminum, and the second wiring contains tungsten.
 14. A semiconductor memory device comprising: a semiconductor substrate; a plurality of memory blocks spaced from the semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate, the plurality of memory blocks being arranged in a second direction intersecting with the first direction; a first wiring that is farther from the semiconductor substrate than the plurality of memory blocks in the first direction; a second wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction; and N (N is an integer of two or more) first contacts electrically connected between the first wiring and the second wiring, wherein when the first wiring is divided into N regions in the second direction, each region is defined as a first region, the first contacts are disposed in each of the N first regions arranged in the second direction.
 15. The semiconductor memory device according to claim 14, wherein the first wiring has a connecting surface connected to the first contact via one or a plurality of conductive members.
 16. The semiconductor memory device according to claim 14, wherein the memory block includes: a plurality of conductive layers arranged in the first direction; a plurality of semiconductor layers extending in the first direction and opposed to the plurality of conductive layers respectively; and a plurality of gate insulating layers disposed between the plurality of conductive layers and the plurality of semiconductor layers respectively.
 17. A semiconductor memory device comprising: a semiconductor substrate; a plurality of memory blocks spaced from the semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate, the plurality of memory blocks being arranged in a second direction intersecting with the first direction; a first wiring that is farther from the semiconductor substrate than the plurality of memory blocks in the first direction; a second wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction; and M (M is an integer of two or more) first contacts electrically connected between the first wiring and the second wiring; when the second wiring is divided into M regions in the second direction, each region is defined as a second region, the first contacts are disposed in each of the M second regions arranged in the second direction.
 18. The semiconductor memory device according to claim 17, wherein the second wiring has a connecting surface connected to the first contact via one or a plurality of conductive members.
 19. The semiconductor memory device according to claim 17, wherein the memory block includes: a plurality of conductive layers arranged in the first direction; a plurality of semiconductor layers extending in the first direction and opposed to the plurality of conductive layers respectively; and a plurality of gate insulating layer disposed between the plurality of conductive layers and the plurality of semiconductor layers respectively. 